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Hafnium silicide formation on Si ( 001 ) | Request PDF

Hafnium silicide islanding occurs spontaneously when metallic Hf is deposited on a Si(001) surface and subsequently annealed at 750 °C. ... Forming gas annealing removed the hysteresis observed ...

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(PDF) Hafnium silicide formation on Si(100) upon annealing

2006-8-16 · hafnium silicide forma tion on si 共 100 兲 upon ¼ physical review b 74, 075319 共 2006 兲 075319-7 then 600 ° C 兲 the LEED pattern is the same as that for

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Hafnium silicide formation on Si(100) upon annealing ...

2006-8-15 · OSTI.GOV Journal Article: Hafnium silicide formation on Si(100) upon annealing

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Silicide formation at HfO2–Si and ZrO2–Si interfaces ...

The formation of hafnium silicide is attributed to oxygen deficiency induced by argon ion sputtering of the film during XPS analysis 9. Figure 2a shows that the Ta 4f signal is fitted with two ...

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Hafnium silicide target and manufacturing method for ...

2003-7-3 · Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi 0.82-0.98, wherein the oxygen content is 500 to 10000 ppm.Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSi 0.82-0.98 is synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing ...

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(PDF) Oxidation of hafnium on Si(001): Silicate formation ...

The oxidation behavior of 0.6 and 1.1 ML hafnium on Si(001) was studied by using scanning reflection electron microscopy with in situ x-ray photoelectron spectroscopy.

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Zirconium and/or hafnium silicon-oxynitride gate ...

1998-7-15 · forming a metal silicide on the substrate, where the metal silicide is selected from the group consisting of hafnium silicide, zirconium silicide, and mixtures thereof; and . annealing the formed metal silicide in an atmosphere including oxygen and nitrogen, thereby forming a metal silicon-oxynitride layer on the substrate. 4.

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Atomic scale effects of zirconium and hafnium ...

2003-10-16 · of forming silicide-like bonds at the interface. Simple bond counting shows that the Zr model contains two Zr–Si and two Si–O bonds more than the Zr model, while the Zr model containstwoSi–SiandtwoZr–ObondsmorethantheZr model. The Zr–Si bonds of

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High-Temperature Deformation of Alloys of the ...

2020-6-19 · Particles of silicide and hafnium oxide are located inside the matrix, without forming an ordered structure. The structure and phase composition of the Nb – Si – X (50+) alloy substantially differ from the alloy made from the powders of the fraction (50–). A niobium based solid solution and silicide precipitations form eutectic colonies ...

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A Hafnium interlayer method to improve the thermal ...

2008-8-1 · The effect of a thin Hafnium interlayer on the thermal stability of NiSi film has been investigated. Both X-ray diffraction and Raman spectra show that no high resistivity NiSi 2 appears in the Hf-additioned films which were post-annealed at temperatures ranging from 600. °C to 800 °C.. Auger electron spectroscopy and Rutherford back scattering show that the Hf interlayer has moved to the ...

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(PDF) Hafnium silicide formation on Si(001) | Paul Lyman ...

The present paper reports our investigation of the formation of hafnium silicide films, which could then be oxidized to form a hafnium silicate [6]. To minimize the Hf/Si ratio, we have concentrated on the formation of the most Si-rich stable silicide phase, HfSi2. The Hf/Si system has been investigated previously in the hope of forming ...

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Hafnium silicide formation on Si(100) upon annealing ...

2006-8-15 · OSTI.GOV Journal Article: Hafnium silicide formation on Si(100) upon annealing

Read More
Silicide formation at HfO2–Si and ZrO2–Si interfaces ...

The formation of hafnium silicide is attributed to oxygen deficiency induced by argon ion sputtering of the film during XPS analysis 9. Figure 2a shows that the Ta 4f signal is fitted with two ...

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Mechanism of Hf-silicide formation at interface between ...

The hafnium silicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. ... but a reaction forming zirconium ...

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(PDF) Oxidation of hafnium on Si(001): Silicate formation ...

The oxidation behavior of 0.6 and 1.1 ML hafnium on Si(001) was studied by using scanning reflection electron microscopy with in situ x-ray photoelectron spectroscopy.

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US7709402B2 - Conductive layers for hafnium silicon ...

hafnium silicon forming hafnium Prior art date 2006-02-16 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active, expires 2027-01-11 Application number US11/355,490 Other versions US20070187831A1 (en ...

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Atomic scale effects of zirconium and hafnium ...

2003-10-16 · of forming silicide-like bonds at the interface. Simple bond counting shows that the Zr model contains two Zr–Si and two Si–O bonds more than the Zr model, while the Zr model containstwoSi–SiandtwoZr–ObondsmorethantheZr model. The Zr–Si bonds of

Read More
High-Temperature Deformation of Alloys of the ...

2020-6-19 · Particles of silicide and hafnium oxide are located inside the matrix, without forming an ordered structure. The structure and phase composition of the Nb – Si – X (50+) alloy substantially differ from the alloy made from the powders of the fraction (50–). A niobium based solid solution and silicide precipitations form eutectic colonies ...

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Amazing diffusion depth of ultra-thin hafnium oxide film ...

2016-4-15 · Hafnium diffusion from ultra-thin high-k gate dielectric HfO 2 deposited on n +-Si substrate by atomic layer deposition at lower temperature of 150 °C was investigated by using x-ray photoelectron energy spectra (XPS) analysis. The surface is the complete oxidation of HfO 2, and Hf and O diffusion into Si substrate with different depths during atomic layer deposition process.

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US Patent Application for HIGH TEMPERATURE

2012-10-29 · FIG. 2 illustrates an example method for forming a protective layer of a composite article. ... At least a portion of the hafnium silicide and carbon byproduct from the pyrolysis of the non-stoichiometric preceramic polymer react to form hafnium carbide as the refractory phase 20.

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(PDF) Hafnium silicide formation on Si(001) | Paul Lyman ...

The present paper reports our investigation of the formation of hafnium silicide films, which could then be oxidized to form a hafnium silicate [6]. To minimize the Hf/Si ratio, we have concentrated on the formation of the most Si-rich stable silicide phase, HfSi2. The Hf/Si system has been investigated previously in the hope of forming ...

Read More
Hafnium silicide formation on Si(100) upon annealing ...

2006-8-15 · OSTI.GOV Journal Article: Hafnium silicide formation on Si(100) upon annealing

Read More
Mechanism of Hf-silicide formation at interface between ...

The hafnium silicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. ... but a reaction forming zirconium ...

Read More
(PDF) Oxidation of hafnium on Si(001): Silicate formation ...

The oxidation behavior of 0.6 and 1.1 ML hafnium on Si(001) was studied by using scanning reflection electron microscopy with in situ x-ray photoelectron spectroscopy.

Read More
High-Temperature Deformation of Alloys of the ...

2020-6-19 · Particles of silicide and hafnium oxide are located inside the matrix, without forming an ordered structure. The structure and phase composition of the Nb – Si – X (50+) alloy substantially differ from the alloy made from the powders of the fraction (50–). A niobium based solid solution and silicide precipitations form eutectic colonies ...

Read More
Amazing diffusion depth of ultra-thin hafnium oxide film ...

2016-4-15 · Hafnium diffusion from ultra-thin high-k gate dielectric HfO 2 deposited on n +-Si substrate by atomic layer deposition at lower temperature of 150 °C was investigated by using x-ray photoelectron energy spectra (XPS) analysis. The surface is the complete oxidation of HfO 2, and Hf and O diffusion into Si substrate with different depths during atomic layer deposition process.

Read More
US Patent Application for HIGH TEMPERATURE

2012-10-29 · FIG. 2 illustrates an example method for forming a protective layer of a composite article. ... At least a portion of the hafnium silicide and carbon byproduct from the pyrolysis of the non-stoichiometric preceramic polymer react to form hafnium carbide as the refractory phase 20.

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Photoelectron spectroscopy (XPS) and photoelectron ...

2006-12-1 · Fig. 1 shows the experimental diffraction patterns for the hafnium silicide film on silicon (1 0 0).In Fig. 1(a) the pattern of the silicon 2p signal is displayed, in Fig. 1(b) and (c) the patterns of the Hf 4f signal of a thin and a thick hafnium silicide film are shown, respectively. A Shirley background was subtracted from the photoemission spectra and the four-fold symmetry of the sample ...

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Interface and oxide traps in high-κ hafnium oxide films ...

2004-9-1 · With thermal annealing in oxygen, the silicide bonds reduced significantly (see Fig. 5). Download : Download full-size image; Fig. 4. Hf 4f core level x-ray photoemission spectra of hafnium silicates with different compositions. Silicate doublet (18–20 eV) is obvious for low Si content samples. Silicide peak (14–16 eV) are found for all ...

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signature=d83015a8f36b1e4e975bf2a4f31be7cb,SELECTIVE ...

2021-5-30 · The silicide metal used in forming the source and drain silicide contacts 26 comprises any metal that is capable of reacting with silicon to form a metal silicide. Examples of such metals include, but are not limited to: Ti, Ta, W, Co, Ni, Pt, Pd and alloys thereof.

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